 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| KSP75/76/77 KSP75/76/77 Darlington Transistor * Collector-Emitter Voltage: VCES= KSP75: 40V KSP76: 50V KSP77: 60V * Collector Power Dissipation: PC (max)=625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage : KSP75 : KSP76 : KSP77 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -40 -50 -60 -10 -500 625 150 -55~150 V V V V mA mW C C Value Units Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCEO Parameter Collector-Base Breakdown Voltage : KSP75 : KSP76 : KSP77 Collector-Base Breakdown Voltage : KSP75 : KSP76 : KSP77 Collector Cut-off Current : KSP75 : KSP76 : KSP77 IEBO ICES Emitter Cut-off Current Collector Cut-off Current : KSP75 : KSP76 : KSP77 hFE VCE (sat) VBE (on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE= -30V, IE=0 VCE= -40V, IE=0 VCE= -50V, IE=0 VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA IC= -100mA, IB= -0.1mA VCE= -5V, IC= -100mA 10K 10K -1.5 2 V V -500 -500 -500 nA nA nA VCE= -30V, IE=0 VCE= -40V, IE=0 VCE= -50V, IE=0 VCE= -10V, IB=0 -100 -100 -100 -100 Test Condition IC= -100A, IB=0 Min. -40 -50 -60 IC= -100A, IE=0 -40 -50 -60 V V V nA nA nA nA nA Max. Units V V V BVCBO ICBO (c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP75/76/77 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000k -10 VCE = -5V IC = 1000 IB hFE, DC CURRENT GAIN 100k VBE(sat) -1 VCE(sat) 10k 1k -1 -10 -100 -1000 -0.1 -1 -10 -100 -400 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 200 -10k VCE = -5V IC [mA], COLLECTOR CURRENT 100 IC[A], COLLECTOR CURRENT -1k 100S 1mS 10 1S -100 TC = 25 C O T a = 25 C O 1 -0.0 -10 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area (c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP75/76/77 Package Demensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
Price & Availability of KSP77
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |